Air gap over transistor gate and related method

ABSTRACT

A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.

BACKGROUND Technical Field

The present disclosure relates to semiconductor devices, and morespecifically, to an air gap over a transistor gate and method of formingthe same. The air gap reduces off-state capacitance (C_(off)) inapplications such as radio frequency switches insemiconductor-on-insulator (SOI) substrates.

Related Art

Radio frequency (RF) switches are widely used in telecommunicationsequipment such as smartphones to route high frequency telecommunicationssignals through transmission paths. For instance, RF switches arecommonly used in smartphones to allow use with different digitalwireless technology standards used in different geographies. Current RFswitches are generally fabricated using semiconductor-on-insulator (SOI)substrates. SOI substrates typically use a layeredsilicon-insulator-silicon substrate in place of a more conventionalsilicon substrate (bulk substrate). SOI-based devices differ fromconventional silicon-built devices in that the silicon junction is abovean electrical insulator, typically silicon dioxide or (less commonly)sapphire.

One challenge with RF switches formed in SOI substrates is controllingtwo competing parameters: on-resistance (R_(on)) which is the resistanceof the switch when power is switched on, and off-state capacitance(C_(off)) which indicates the amount of cross-talk or noise that mayoccur within the system, i.e., the amount transmitted signals on onecircuit creates an undesired effect on another circuit. R_(on) ispreferred to be as low as possible when the RF switch is on to reducethe power consumption, and C_(off) should be minimized to reduceundesired coupling noise. In conventional semiconductor manufacturingprocesses, lowering either R_(on) or C_(off) results in the oppositeeffect in the other parameter.

SUMMARY

A first aspect of the disclosure is directed to a method of forming anair gap for a semiconductor device, the method comprising: forming anair gap mask exposing a portion of an interconnect layer over a devicelayer, the device layer including a transistor gate therein; etching anopening through the interconnect layer using the air gap mask above thetransistor gate, the opening exposing sidewalls of a dielectric of theinterconnect layer; removing the air gap mask; recessing the exposedsidewalls of the dielectric of the interconnect layer in the opening;and forming an air gap over the transistor gate by depositing an air gapcapping layer to seal the opening at a surface of the interconnectlayer.

A second aspect of the disclosure includes a semiconductor device,comprising: a transistor gate in a device layer; an interconnect layerover the device layer; and an air gap extending through the interconnectlayer above the transistor gate.

A third aspect of the disclosure related to a radio frequencysemiconductor-on-insulator (RFSOI) switch, comprising: a transistor gatein a semiconductor-on-insulator (SOI) layer of an SOI substrate; aninterconnect layer over the SOI layer, the interconnect layer includinga local interconnect layer over the SOI layer and a first metal layerover the local interconnect layer; and an air gap extending through adielectric of the interconnect layer above the transistor gate.

The foregoing and other features of the disclosure will be apparent fromthe following more particular description of embodiments of thedisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of this disclosure will be described in detail, withreference to the following figures, wherein like designations denotelike elements, and wherein:

FIG. 1 shows a cross-sectional view of embodiments of a method accordingto the disclosure.

FIG. 2 shows an enlarged cross-sectional view of an illustrativetransistor gate.

FIGS. 3A-E show cross-sectional views of etching an opening according toembodiments of a method of the disclosure.

FIG. 4 shows a cross-sectional view of removing an air gap maskaccording to embodiments of the disclosure.

FIGS. 5-7 show plan views of embodiments of a structure partiallythrough a method according to the disclosure.

FIG. 8A-C show cross-sectional views of recessing an opening accordingto embodiments of the disclosure.

FIG. 9 shows an enlarged cross-sectional view of a detail per the FIG.8B embodiment.

FIG. 10 shows a cross-sectional view of a method and a semiconductordevice such as a radio frequency SOI switch with an air gap over atransistor gate thereof according to embodiments of the disclosure.

FIGS. 11 and 12 shows cross-sectional views of alternative methods andalternative semiconductor devices with an air gap over a transistor gatethereof according to embodiments of the disclosure.

It is noted that the drawings of the disclosure are not to scale. Thedrawings are intended to depict only typical aspects of the disclosure,and therefore should not be considered as limiting the scope of thedisclosure. In the drawings, like numbering represents like elementsbetween the drawings.

DETAILED DESCRIPTION

The present disclosure relates to methods of forming semiconductordevices including an air gap over a transistor gate for reducing thecapacitance between the transistor gate and adjacent wires, contacts,and vias used to contact the source and drain of the transistor. Thiscapacitance reduction may decrease the off-state capacitance of thetransistor when it is used in in such applications as radio frequency(RF) switches in semiconductor-on-insulator (SOI) substrates or bulk(non-SOI) substrates. Use of an air gap over a transistor gate accordingto the various embodiments of the disclosure provides a mechanism toreduce off-capacitance of any device using it by controlling one of themain contributors of intrinsic field effect transistor (FET)capacitance: the effective dielectric constant of the contact or localinterconnect layer and the first metal layer. While the teachings of thedisclosure will be described with regard to an SOI substrate andrelative to an RF switch, it will be understood that the embodiments canbe applied to various alternative semiconductor devices such as but notlimited to low noise amplifiers (LNA) and power amplifiers. Further, theteachings may be applied to different substrates, such as a bulksubstrate.

Referring to FIG. 1, a cross-sectional view of a first process of amethod of forming an air gap for a semiconductor device according toembodiments of the disclosure is illustrated. FIG. 1 shows asemiconductor device 100 after formation of a device layer 102 and aninterconnect layer 104. Device layer 102 is illustrated as including asemiconductor-on-insulator (SOI) substrate 106 including a semiconductorsubstrate 108 with an insulator layer 110 thereover and asemiconductor-on-insulator (SOI) layer 112 thereover. Substrate 108 andSOI layer 112 may include but are not limited to silicon, germanium,silicon germanium, silicon carbide, and those consisting essentially ofone or more III-V compound semiconductors having a composition definedby the formula Al_(X1)Ga_(X2)In_(X3)As_(Y1)P_(Y2)N_(Y3)Sb_(Y4), whereX1, X2, X3, Y1, Y2, Y3, and Y4 represent relative proportions, eachgreater than or equal to zero and X1+X2+X3+Y1+Y2+Y3+Y4=1 (1 being thetotal relative mole quantity). Other suitable materials include II-VIcompound semiconductors having a compositionZn_(A1)Cd_(A2)Se_(B1)Te_(B2), where A1, A2, B1, and B2 are relativeproportions each greater than or equal to zero and A1+A2+B1+B2=1 (1being a total mole quantity). Furthermore, a portion or entiresemiconductor substrate 108 and/or SOI layer 112 may be strained. Forexample, SOI layer 112 may be strained. SOI layer 112 may be segmentedby shallow trench isolations (STI) 114. Insulator layer 110 may includeany appropriate dielectric material for the application desired, e.g.,silicon oxide (SiO_(x)) or (less commonly) sapphire. Insulator layer 110and/or STI 114 may also include the same material, such as silicondioxide or any other interlayer dielectric material described herein.

Device layer 102 also includes a number of transistors 116 formedtherein. Each transistor 116 may include any now known or laterdeveloped transistor structure such as doped source/drain regions (notlabeled) in SOI layer 112 having a transistor gate 118 thereover andtherebetween. FIG. 2 shows an enlarged cross-sectional view of anillustrative transistor gate 118. Each transistor gate 118 may include,among other structures, a body 120 of polysilicon or a metal gateconductor (commonly referred to collectively as “PC”), spacers 122 aboutbody 120, a gate dielectric 124 under body 120, a silicide layer 125over body 120 (i.e., a silicon-metal alloy), and an etch stop layer 126over silicide layer 125 and/or spacers 122. Spacers 122 may include anynow known or later developed spacer material such as silicon nitride(Si₃N₄), and gate dielectric 124 may include any now known or laterdeveloped gate dielectric material such as: hafnium silicate (HfSiO),hafnium oxide (HfO₂), zirconium silicate (ZrSiO_(x)), zirconium oxide(ZrO₂), silicon oxide (SiO₂), silicon nitride (Si₃N₄), siliconoxynitride (SiON), high-k material or any combination of thesematerials. Etch stop layer 126 may include any now known or laterdeveloped etch stop material such as silicon nitride. Silicide layer 125may include any now known or later developed silicide material, e.g.,titanium, nickel, cobalt, etc. As understood, each transistor gate 118may run into, out of, or across the page as illustrated.

Returning to FIG. 1, interconnect layer 104, as described herein, mayinclude a number of layers including a contact or local interconnectlayer 130 (commonly referred to as a contact area (CA) layer) and afirst metal layer 132. Each layer 130, 132 may include an interlayerdielectric (ILD) layer 134, 136, respectively. ILD layers 134, 136 mayinclude may but are not limited to: silicon nitride (Si₃N₄), siliconoxide (SiO₂), fluorinated SiO₂ (FSG), hydrogenated silicon oxycarbide(SiCOH), porous SiCOH, boro-phospho-silicate glass (BPSG),silsesquioxanes, carbon (C) doped oxides (i.e., organosilicates) thatinclude atoms of silicon (Si), carbon (C), oxygen (O), and/or hydrogen(H), thermosetting polyarylene ethers, SiLK (a polyarylene etheravailable from Dow Chemical Corporation), a spin-on silicon-carboncontaining polymer material available from JSR Corporation, other lowdielectric constant (<3.9) material, or layers thereof. Each layer 130,132 may also include a respective cap layer 138, 140 at an upper surfacethereof. Each cap layer 138, 140 may include one or more layers, forexample, a silicon oxide layer 142 and an etch stop layer 144, formedfrom silicon nitride (nitride), silicon carbo nitride (SiCN), etc., asknown in the art. As understood, various other forms of cap layers mayalso be employed. Further, it is emphasized that while cap layers 138,140 are illustrated as identical, they can be different materials,thicknesses, etc.

A number of contacts 150 may extend through ILD layer 134 of contact orlocal interconnect layer 130 (hereafter “local interconnect layer 130”)to various parts of device layer 102. In the example shown, contacts 150extend to source/drain regions of transistors 116. As understood, eachcontact 150 may include a conductor such as aluminum or copper, within arefractory metal liner of ruthenium; however, other refractory metalssuch as tantalum (Ta), titanium (Ti), tungsten (W), iridium (Ir),rhodium (Rh) and platinum (Pt), etc., or mixtures of thereof, may alsobe employed. Typically, contacts 150 extend mostly vertically withinsemiconductor device 100 to connect conductors in layers thereof, i.e.,vertically on page as illustrated. First metal layer 132 may include anumber of metal wires 152 therein. Each metal wire 152 may use the samematerials as listed for contacts 150. In contrast to contacts 150, metalwires 152 extend mostly horizontally or laterally in a layer withinsemiconductor device 100 to connect contacts 150 therein, i.e., into,out of, or across a page as illustrated. In this manner, first metallayer 132 may include a metal wire 152 extending laterally parallel totransistor gate 118 in device layer 102, i.e., vertically above butparallel to transistor gate 118. Semiconductor device 100 as illustratedin FIG. 1 can be formed using any now known or later developedsemiconductor fabrication techniques, e.g., material deposition,photolithographic patterning and etching, doping, etc. Although contacts150 and wires 152 are shown in FIG. 1 as single damascene levels, theycould be formed using as dual damascene levels containing refractorymetal lined copper or tungsten, as known in the art.

“Depositing” or “deposition,” as used herein, may include any now knownor later developed techniques appropriate for the material to bedeposited including but not limited to, for example: chemical vapordeposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced CVD (PECVD),semi-atmosphere CVD (SACVD) and high density plasma CVD (HDPCVD), rapidthermal CVD (RTCVD), ultra-high vacuum CVD (UHVCVD), limited reactionprocessing CVD (LRPCVD), metalorganic CVD (MOCVD), sputteringdeposition, ion beam deposition, electron beam deposition, laserassisted deposition, thermal oxidation, thermal nitridation, spin-onmethods, physical vapor deposition (PVD), atomic layer deposition (ALD),chemical oxidation, molecular beam epitaxy (MBE), plating, evaporation.

FIG. 1 also shows forming an air gap mask 160 exposing a portion 162 ofinterconnect layer 104 over device layer 102. Mask 160 may be formed,for example, post first metal layer 132 damascene planarization, e.g.,via chemical mechanical polishing (CMP), and may include any now knownor later developed masking material. Mask 160 is patterned and etched ina conventional fashion to create openings 164 therein. In oneembodiment, transistor gate 120 width is approximately 200 nm andopenings 164 in air gap mask 160 may have a size of approximately 0.16micrometers (um) to 0.24 um, and in particular, 0.2 um. These widthscould scale with larger and smaller channel transistor width or withlarger or smaller contact 150 and wire 152 width.

FIGS. 3A-E show etching an opening 166 through interconnect layer 104using air gap mask 160 above transistor gate 118. Opening 166 exposessidewalls 170 of a dielectric 134, 136 of interconnect layer 104.Etching generally refers to the removal of material from a substrate (orstructures formed on the substrate), and is often performed with a maskin place so that material may selectively be removed from certain areasof the substrate, while leaving the material unaffected, in other areasof the substrate. There are generally two categories of etching, (i) wetetch, and (ii) dry etch. Wet etch is performed with a solvent (such asan acid or a base) which may be chosen for its ability to selectivelydissolve a given material (such as oxide), while, leaving anothermaterial (such as polysilicon or nitride) relatively intact. Thisability to selectively etch given materials is fundamental to manysemiconductor fabrication processes. A wet etch will generally etch ahomogeneous material (e.g., oxide) isotopically, but a wet etch may alsoetch single-crystal materials (e.g. silicon wafers) anisotopically. Dryetch may be performed using a plasma. Plasma systems can operate inseveral modes by adjusting the parameters of the plasma. Ordinary plasmaetching produces energetic free radicals, neutrally charged, that reactat the surface of the wafer. Since neutral particles attack the waferfrom all angles, this process is isotopic. Ion milling, or sputteretching, bombards the wafer with energetic ions of noble gases whichapproach the wafer approximately from one direction, and therefore thisprocess is highly anisotopic. Reactive-ion etching (RIE) operates underconditions intermediate between sputter and plasma etching and may beused to produce deep, narrow features, such as STI trenches. In FIGS.3A-E, the etching (indicated by arrows in FIG. 3A only) may include aRIE. As used herein, “above the transistor gate” transistor gate 118 asit refers to opening 166 and/or any air gap formed therewith, meansoverlapping transistor gate 118 in any fashion.

As shown in FIGS. 3A-E, opening 166 may extend above transistor gate 118to a number of different depths. With regard to opening 166 depth,etching opening 166 may cease when: opening 166 meets or extends to etchstop layer 126 (FIG. 3A); recesses etch stop layer 126 (FIG. 3B);removes (extends beyond) etch stop layer 126 exposing silicide layer 125(FIG. 3C); exposes body 120 (FIG. 3D), e.g., if silicide layer 125 isnot present or has been removed entirely; or does not expose etch stoplayer 126 by not extending through dielectric layer 134 above gate 118(FIG. 3E). Accordingly, the etching of FIGS. 3A-E can be controlled toselect the extent of exposure of an upper surface 168 of transistor gate118.

FIG. 4 shows the semiconductor device after removing air gap mask 160(on the FIG. 3B embodiment only for brevity). Air gap mask 160 (FIGS.3A-E) may be removed using any now known or later developed resiststrip, in-situ or ex-situ.

FIGS. 5-7 show plan or top views of embodiments of the structure afterFIG. 4 processing, i.e., partially through the methods according to thedisclosure. FIGS. 5-7 illustrate example layouts of openings 166, andhence, air gaps 188 (FIG. 10) to be formed thereby, as will be describedherein. The cross-sections of FIGS. 5-7 are taken through dielectric 134in FIG. 4. FIGS. 5-7 show SOI layer 112 (active area) having gates 118formed thereover with contacts 150 extending from gate 118 and SOI layer112. Metal wires 152 are shown coupling certain contacts 150 over SOIlayer 112. As illustrated metal wires 152 run parallel to certain gates,labeled 118A. As illustrated, openings 166 can take a variety of forms.In FIG. 5, openings 166 are etched as laterally elongate openings abovetransistor gate 118. That is, rather than simple vertical openings,openings 166 have a length, e.g., just short of a transistor gate 118that they parallel. In one embodiment, although not necessary, a portionof opening 166 may be etched in a laterally disposed T-shape 174, i.e.,in a T-shape laid out horizontally in the plane of the page. In anyevent, openings 166 do not expose contacts 150 or metal wires 152, i.e.,some of dielectric 134, 136 (FIG. 4) remains between contacts 150 andwires 152 and openings 166. In FIG. 6, openings 166 through interconnectlayer 104 may be designed such that they are narrower adjacent tocontacts 150 (or subsequently formed vias 194 (FIGS. 10-12)) to reducethe likelihood of contact 150 intersecting air gap 188 (FIG. 10). Thatis, opening 166 may be narrower (width W2) laterally adjacent a contact150 (or vias 194 (FIGS. 10-12)) and wider (width W1) laterally betweencontacts 150 (or vias 194 (FIGS. 10-12)) to reduce the likelihood ofcontact 150 (or via 194) being exposed by air gap 188, which would allowfilling of air gap 188 with a conductor. Consequently, air gap 188(FIGS. 10-12) may have the same layout, i.e., as shown in FIG. 6, with afirst width W1 laterally adjacent a contact 150 (or via 194) and asecond width W2 wider than first width W1 laterally between contacts 150(or vias 194). The variable width can occur in local interconnect layer130 and/or first metal layer 132 and/or subsequent layers 190 (FIGS.10-12). That is, air gap 188 would have a similar width variationregardless of whether viewed through local interconnect layer 130, firstmetal layer 132 or a subsequent air gap capping layer 190 (FIGS. 10-12).In FIG. 7, openings 166 may be etched as many, not necessarilyelongated, disconnected openings. Here, some of openings 166 in FIG. 7are designed not to be adjacent to contact 150 (or subsequently formedvias 194 (FIGS. 10-12)) to reduce the likelihood of contact 150 or via194 intersecting air gap 188 (FIGS. 8A-C), which would allow filling ofair gap 188 with a conductor. Selecting amongst the various lengths ofopening 166 shown in FIGS. 5-7, one can eventually establish air gaps188 (FIG. 10) that will optimally reduce on-resistance andoff-capacitance of a semiconductor device 200 (FIG. 10) by reducing aneffective dielectric constant for interconnect layer 104, and avoidshorts by openings 166 exposing a contact 150, via 194 (FIGS. 10-12) orwire 152. Air gap openings 166 may also be formed with different widths,as shown in FIG. 6. Air gap opening 166 width may be reduced in width,for example, near contacts 150 or vias 194 to reduce the likelihood ofthe air gap 188 intersecting the contacts or vias, due to misalignment.

FIGS. 8A-C show an optional recessing of exposed sidewalls 170 ofdielectric 134, 136 of interconnect layer 104 in opening 166. Amongother benefits, recessing sidewalls 170 acts to enlarge opening 166 andthus air gaps 188 (FIG. 10), reducing the effective dielectric constantof interconnect layer 104 while leaving the air gap top opening to besealed in the next process step narrower than the air gap itself. Ifsilicon oxide films are used for local interconnect and first metallayers 130, 132 and silicon nitride is used for cap layer(s) 138, 140,then a hydrofluoric acid (HF) wet etch could be used for this recess(indicated by arrows in FIG. 3A only for brevity). HF concentrationscould be in the range of 10:1 to 500:1 dilution with water, as known inthe art. Because dielectrics of layers 130 and 132 etch faster than thedielectric of cap layer(s) 138, 140 (FIG. 1), FIG. 9 shows that openingwidths BB and CC are wider than air gap top opening AA. The recessingmay include, for example, a wet etch as described elsewhere herein. Inone embodiment, shown in FIGS. 8A-C and 9, recessing exposed sidewalls170 of dielectric 134, 136 of interconnect layer 104 in opening 166 mayexpose an edge 180, 182 of at least one of the local interconnect caplayer 130 and first metal cap layer 132 in opening 166. As will bedescribed, edges 182 assist in closing opening 166 to form an air gap,e.g., by facilitating the pinching off of opening 166.

As shown in FIGS. 8A-C, recessing at this stage can also be used tofurther deepen opening 166. Assuming, for example, recessing occurredafter air gap mask removal 160 in FIG. 4, but with the FIG. 3Eembodiment in which dielectric layer 134 remains above transistor gate118, recessing as shown in FIGS. 8A-C can further deepen opening 166 toany of the depths shown in FIGS. 3A-E. For example, where opening 166did not extend through dielectric layer 134 to meet or contact etch stoplayer 126, recessing may extend opening 166 thereto (FIG. 8A, leftside). Similarly, recessing could extend opening 166 to recess etch stoplayer 126 (FIG. 8A, right side) or expose silicide 125 (FIG. 8B, leftside), or expose body 120 (FIG. 8B, right side). Further, recessingcould extend opening 166 further into dielectric layer 134 but notexpose any of gate 118 (FIG. 8C). In this fashion, the extent to whichtransistor gate 118 is exposed to an air gap 188 (FIG. 10) formed fromopening 166 can be precisely controlled in addition to the controlprovided by the etching of FIGS. 3A-E.

FIG. 10 shows forming an air gap 188 over transistor gate 118 bydepositing an air gap capping layer 190 to seal opening 166 (FIG. 9) ata surface of interconnect layer 104. As shown, air gap 188 is verticallyaligned with transistor gate 118, although perfect alignment is notnecessary in all cases. Air gap capping layer 190 may include anydielectric material capable of sealing opening 166 and acting as an ILDfor a first via layer (not shown) to be formed therein. In oneembodiment, air gap capping layer 190 may include chemical vapordeposited (CVD) dielectric. In another embodiment, air gap capping layer190 may include a plasma-enhanced chemical vapor deposition (PECVD)silane oxide. PECVD silane oxide may be chosen because it has very poorstep coverage, resulting in a larger air gap volume. In otherembodiments, air gap capping layer 190 may include a thin siliconnitride layer with an ILD oxide, such as a PECVD TEOS-based, PVD, orsimilar oxide (individual layers not shown for clarity). Edges 182 offirst metal cap layer 140 (FIG. 1) of first metal layer 132 act to pinchopening 166 to assist in closing air gap 188. Air gap 188 does notexpose any contact 150 or metal wire 152, i.e., dielectric 134, 136 ofinterconnect layer 104 about air gap 188 covers any conductive wire 152in first metal layer 132 or any conductive contact 150 in localinterconnect layer 130. Air gap 188 may have any of the lateral layoutsof opening 166, as shown in FIGS. 5-7. Further, first metal layer 132may include a metal wire 152 (FIG. 10) extending laterally parallel totransistor gate 118 (see FIGS. 5-7) in device layer 102. As shown inFIG. 10, air gap 188 vertically extends above and below metal wire 152,i.e., below dielectric 136 of first metal layer 132 and above metal wire152 in cap layer 190. Most notably, air gap 188 extends above an uppersurface of first metal layer 132. As also shown in FIG. 10, air gap 188may vertically extend only partially into air gap capping layer 190 sothat layer 190 can act as a first via layer ILD with minimalinterference from air gap 188. Vias 194 to another metal layer (notshown) may be formed in air gap capping layer 190, using anyconventional or later developed technique. As shown on the right side ofFIG. 10 only, a thin layer 192 of air gap capping layer 190 mayselectively cover transistor gate 118 in opening 116, thus providingadditional control over the extent to which transistor gate 118 isexposed to air gap 188. Air gap capping layer 190 seals opening 166regardless of the lateral layout it takes from FIGS. 5-7, e.g.,elongated or a non-elongated smaller opening, T-shaped or varying width(FIG. 6). As noted herein, the lateral formation of opening 166(described relative to FIGS. 5-7) can be controlled to avoid exposingthereof by subsequently formed vias 194, thus preventing via 194conductor from entering air gap 188.

Alternative air gap embodiments are shown in FIGS. 11 and 12. FIG. 11shows an air gap 288 which has a shallower etch depth (FIGS. 3A-E) toavoid touching transistor gate 118. FIG. 12 shows an air gap 388 whichhad the recess etch shown in FIGS. 8A-C reduced or eliminated. Thisstructure has a smaller air gap 388 than shown in FIG. 11 but avoidsexposing the dielectrics of local interconnect layer 130 and first metallayer 132 to the etchant.

Referring to FIGS. 10-12, a semiconductor device 200 according toembodiments of the disclosure is also shown. In one embodiment,semiconductor device 200 may include transistor gate 118 in device layer102. Transistor gate 118 may include body 120, silicide layer 125 overbody 120, and etch stop layer 126 over silicide layer 125. Transistor116 can take the form of any now known or later developed complementarymetal-oxide semiconductor (CMOS) field effect transistor (FET).Semiconductor device 200 can also include interconnect layer 104 overdevice layer 102. Interconnect layer 104 may include one or moreinterconnect layers, for example, local interconnect layer 130 and firstmetal layer 132. Semiconductor device 200 also includes air gap 188extending through interconnect layer 104 above transistor gate 118. Asdescribed, the extent to which transistor gate 118, i.e., upper surface168 thereof, is exposed and/or what part of gate 118 is exposed to airgap 188 can be controlled through the etching, recessing and cappingprocesses. As understood, air gap 188 can be formed with any embodimentof opening 166 provided. That is, air gap 188 may meet or extend to etchstop layer 126 (left side of FIG. 10); extend into etch stop layer 126(see FIGS. 3B, 4 and 8A, right side) not exposing silicide layer 125;remove etch stop layer 126 (and perhaps parts of spacers 122) exposingsilicide layer 125 (FIG. 3C, left side of FIG. 8B); if silicide layer125 is not present or has been removed entirely, expose a portion ofbody 120 (FIG. 3D, right side of FIG. 8B); or if a thin layer 192 ofcapping layer 190 has been deposited into opening 166 (right side ofFIG. 10) or opening 166 does not extend through dielectric layer 134(FIGS. 3E, 8C and 11), extend to thin layer 192 of capping layer 190 ordielectric layer 134 over transistor gate 118. Consequently, abovetransistor gate 118, an air gap may contact dielectric such asdielectric layer 134 or thin layer 192 of cap layer 190, contact etchtop layer 126 (either full or recessed), contact silicide layer 125 orcontact body 120 of transistor gate 118. In any event, dielectric 134,136 of interconnect layer 104 about air gap 188 covers any conductor,e.g., any conductive wire 152 in first metal layer 132 or any conductivecontact 150 in local interconnect layer 130. Edges 180 and/or 182 of atleast one of local interconnect cap layer(s) 138 and first metal caplayer(s) 140 may extend into air gap 188. As shown in FIG. 9, firstmetal cap layer 140 may have a width AA in the air gap (where opening166 is positioned in FIG. 9) that is less than a width BB of the air gap(where opening 166 is positioned in FIG. 9) in dielectric 136 of firstmetal layer 132 below first metal cap layer 140. As such, edges 182 offirst metal cap layer 140 act to pinch off dielectric 190, allowing fora lesser amount of dielectric 190 to seal opening 166.

At least a portion of etch stop layer 126 of transistor gate 118 may berecessed (FIGS. 4 and 8). In one embodiment, air gap 188 may have aheight-to-width ratio greater than approximately 3 to 1, e.g., 4 to 1.In one embodiment, air gap 188 may have a width of approximately 1-2 um,and a height of approximately 8-10 um. As shown in FIG. 5, air gap 188may be laterally elongated or T-shaped-like opening 166 used to form it.

As will be recognized, semiconductor device 200 can be used to form avariety of devices such as a radio frequency semiconductor-on-insulator(RFSOI) switch, a low amplitude amplifier, a power amplifier, etc. Useof air gap 188, 288 or 388 over transistor gate 118 according to thevarious embodiments of the disclosure provides a mechanism to reduceoff-capacitance and on-resistance of any device using it by controllingone of the main contributors of intrinsic FET capacitance: the effectivedielectric constant of local interconnect layer 130 and first metallayer 132. In one example, an off-capacitance reduction of betweenapproximately 15-60% was observed, with an effective dielectric constantof interconnect layer 104 lowered from approximately 4 to 2 using airgap 188, 288 or 388.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof. “Optional” or “optionally” means thatthe subsequently described event or circumstance may or may not occur,and that the description includes instances where the event occurs andinstances where it does not.

Approximating language, as used herein throughout the specification andclaims, may be applied to modify any quantitative representation thatcould permissibly vary without resulting in a change in the basicfunction to which it is related. Accordingly, a value modified by a termor terms, such as “about”, “approximately” and “substantially”, are notto be limited to the precise value specified. In at least someinstances, the approximating language may correspond to the precision ofan instrument for measuring the value. Here and throughout thespecification and claims, range limitations may be combined and/orinterchanged, such ranges are identified and include all the sub-rangescontained therein unless context or language indicates otherwise.“Approximately” as applied to a particular value of a range applies toboth values, and unless otherwise dependent on the precision of theinstrument measuring the value, may indicate +/−10% of the statedvalue(s).

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present disclosure has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the disclosure in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the disclosure. Theembodiment was chosen and described in order to best explain theprinciples of the disclosure and the practical application, and toenable others of ordinary skill in the art to understand the disclosurefor various embodiments with various modifications as are suited to theparticular use contemplated.

1. A semiconductor device, comprising: a transistor gate in a devicelayer; an interconnect layer over the device layer, the interconnectlayer including a dielectric layer and a first metal layer over thedielectric layer; and an air gap extending through the interconnectlayer above the transistor gate, wherein the dielectric layer isdisposed adjacent to the air gap such that the dielectric layer coversany conductive wire in the first metal layer adjacent to the air gap,and any conductive via in the interconnect layer adjacent to the airgap.
 2. The semiconductor device of claim 1, wherein the dielectriclayer is part of a local interconnect layer disposed over the devicelayer.
 3. The semiconductor device of claim 1, wherein the first metallayer includes a first metal cap layer at an upper surface thereof, andwherein a width of the air gap in the first metal cap layer is less thana width of the air gap in a dielectric of the first metal layer belowthe first metal cap layer.
 4. The semiconductor device of claim 2,wherein the interconnect layer includes a local interconnect cap layerincludes at an upper surface thereof, and the first metal layer includesa first metal cap layer at an upper surface thereof, and an edge of atleast one of the local interconnect cap layer and the first metal caplayer extends into the air gap.
 5. The semiconductor device of claim 1,wherein the first metal layer includes a metal wire extending laterallyparallel to the transistor gate in the device layer, and wherein the airgap vertically extends above and below the metal wire.
 6. Thesemiconductor device of claim 1, wherein the air gap vertically extendsonly partially into an air gap capping layer above the first metallayer.
 7. The semiconductor device of claim 6, wherein the air gapcapping layer includes a dielectric material.
 8. The semiconductordevice of claim 7, wherein the dielectric material includes siliconoxide.
 9. The semiconductor device of claim 1, wherein the transistorgate includes a body, a silicide layer over the body and an etch stoplayer over the silicide layer.
 10. The semiconductor device of claim 9,wherein the air gap contacts the etch stop layer. 11-13. (canceled) 14.The semiconductor device of claim 1, wherein the air gap is laterallyelongated.
 15. (canceled)
 16. The semiconductor device of claim 1,wherein the air gap has a first width laterally adjacent a contact or avia and a second width wider than the first width laterally betweencontacts or vias.
 17. A radio frequency semiconductor-on-insulator(RFSOI) switch, comprising: a transistor gate in asemiconductor-on-insulator (SOI) layer of an SOI substrate; aninterconnect layer over the SOI layer, the interconnect layer includinga local interconnect layer over the SOI layer and a first metal layerover the local interconnect layer, wherein the interconnect layerincludes at least one dielectric layer; and an air gap extending throughthe at least one dielectric layer above the transistor gate, wherein aportion of the at least one dielectric layer is disposed adjacent to theair gap such that the portion of the at least one dielectric covers anyconductive wire in the first metal layer adjacent to the air gap and anyconductive via in the local interconnect layer adjacent to the air gap.18. The RFSOI switch of claim 17, wherein the transistor gate includes abody, a silicide layer over the body and an etch stop layer over thesilicide layer, and wherein the air gap contacts one of the etch stoplayer, the silicide layer and the body of the transistor gate.
 19. TheRFSOI switch of claim 17, wherein the air gap has a first widthlaterally adjacent a contact or a via and a second width wider than thefirst width laterally between contacts or vias.
 20. The RFSOI switch ofclaim 17, wherein the air gap vertically extends only partially into anair gap capping layer above the first metal layer.